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A 3–10 GHz CMOS low‐noise amplifier using wire bond inductors
Author(s) -
Yang Miyoung,
Ha Mincheol,
Park Youngjin,
Eo Yunseong
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24082
Subject(s) - inductor , cmos , low noise amplifier , electrical engineering , noise figure , amplifier , microwave , wideband , chip , engineering , electronic engineering , materials science , optoelectronics , telecommunications , voltage
In this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise amplifier (LNA) is 4 dB at minimum and IIP3 + 1.1 dBm at 5 GHz, respectively. The current consumption is 4 mA at 1.8 V supply. The LNA chip size including pads is 1 mm × 1 mm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 414–416, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24082