A 3–10 GHz CMOS low‐noise amplifier using wire bond inductors | Zendy

Yang Miyoung | Zendy; Ha Mincheol | Zendy; Park Youngjin | Zendy; Eo Yunseong | Zendy

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A 3–10 GHz CMOS low‐noise amplifier using wire bond inductors

Author(s) -

Yang Miyoung,

Ha Mincheol,

Park Youngjin,

Eo Yunseong

Publication year - 2009

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.24082

Subject(s) - inductor , cmos , low noise amplifier , electrical engineering , noise figure , amplifier , microwave , wideband , chip , engineering , electronic engineering , materials science , optoelectronics , telecommunications , voltage

In this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise amplifier (LNA) is 4 dB at minimum and IIP3 + 1.1 dBm at 5 GHz, respectively. The current consumption is 4 mA at 1.8 V supply. The LNA chip size including pads is 1 mm × 1 mm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 414–416, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24082

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