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Characterization of photoconductive semiconductor switches under nonlinear mode condition
Author(s) -
Ruan Chi,
Zhao Wei,
Zhu ShaoLan,
Liu HongJun,
Yang HongChun,
Ruan ChengLi
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24001
Subject(s) - nonlinear system , laser , semiconductor , voltage , photoconductivity , optoelectronics , microwave , physics , mode (computer interface) , field (mathematics) , materials science , optics , mathematics , computer science , quantum mechanics , pure mathematics , operating system
Abstract A photoconductive semiconductor switch (PCSS) would work in a nonlinear mode under high biased electrical field. The experimental results of nonlinear critical state have shown that both the biased voltage and the laser energy may have working thresholds to turn on the nonlinear modes. The relation between the biased voltage and the laser energy is inverse ratio, i.e., higher biased field need lower laser energy for nonlinear mode, and vise versa. At the nonlinear critical point, the output of PCSS is unstable, as both the linear and nonlinear pulse may occur. As the laser energy and biased field increase, the PCSS would work in the nonlinear mode steadily. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 56–59, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24001