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A 24‐GHz 90‐nm CMOS injection‐locked frequency divider
Author(s) -
Lee ChienFeng,
Jang ShengLyang
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23986
Subject(s) - frequency divider , phase noise , dbc , electrical engineering , cmos , voltage controlled oscillator , microwave , materials science , injection locking , voltage , transistor , resonator , optoelectronics , engineering , physics , telecommunications , optics , laser
This article presents a fully integrated 24‐GHz divide‐by‐2 injection‐locked frequency divider (ILFD). The circuit was implemented using a standard 90‐nm CMOS process. The ILFD consists of a VCO core and injection MOS for injection signal to the resonator. Two injection MOSFETs are in series with the cross‐coupled transistors. The measurement results show that at the supply voltage of 1.2 V, the free‐running ILFD is tunable from 11.4 to 12.11 GHz. The locking range is from 21.93 to 27.11 GHz. The output phase noise of the locked ILFD is −109.82 dBc/Hz at 10‐KHz offset frequency from the 12 GHz. The core power consumption is 4.32 mW at the supply voltage of 1.2 V. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 32–36, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23986