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A 60 GHz mixer using 0.25 μm SiGe BiCMOS technology
Author(s) -
Lee SangHeung,
Lee JaYol,
Kim Haecheon
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23887
Subject(s) - balun , frequency mixer , microwave , electrical engineering , bicmos , chip , optoelectronics , materials science , monolithic microwave integrated circuit , engineering , electronic circuit , wireless , radio frequency , cmos , electronic engineering , telecommunications , transistor , antenna (radio) , amplifier , voltage
In this article, a 60 GHz band down‐conversion mixer for 60 GHz wireless personal‐area network is designed and fabricated on a chip using 0.25 μm SiGe:C BiCMOS process technology. To design this 60 GHz band mixer, architecture of double‐balanced mixer is used, including input and output balun circuits, which are composed of active elements. The results of the fabricated mixer measured between RF 57 and 63 GHz show conversion gain of 12.0–10.7 dB, LO to RF isolation and LO to IF isolation of more than 28 dB, and input P1dB of −17 to −18 dBm. The chip size of the manufactured mixer is 1.3 mm × 0.8 mm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 3007–3009, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23887