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Analysis and experiment for drain bias dependence of IMD sweet spots in GaN HEMT power amplifier
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23863
Subject(s) - intermodulation , high electron mobility transistor , amplifier , gallium nitride , transistor , distortion (music) , optoelectronics , microwave , materials science , spots , electrical engineering , engineering , chemistry , telecommunications , layer (electronics) , nanotechnology , cmos , voltage
In this article, we propose the drain bias dependency on the intermodulation distortion (IMD) sweet spots of a gallium nitride (GaN) high‐electron mobility transistors power amplifier (PA). Using the mathematical approach by the I DS –V GS characteristic curves and two‐tone distortion products, the positions of the IMD sweet spots according to drain bias as well as gate bias and input power are predicted and well‐matched with the measured results. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2836–2839, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23863