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A Ka‐band CMOS power amplifier using new substrate‐shielded coplanar waveguide
Author(s) -
Lee JongWook,
Heo SangMoo
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23827
Subject(s) - amplifier , coplanar waveguide , cmos , ka band , shielded cable , electrical engineering , optoelectronics , transistor , rf power amplifier , materials science , extremely high frequency , monolithic microwave integrated circuit , power added efficiency , microwave , electronic engineering , engineering , telecommunications , voltage
A Ka‐band three‐stage power amplifier was developed in 0.18 μm CMOS technology using a new substrate‐shielded coplanar waveguide (CPW). The new CPW structure reduces the loss from the conductive silicon substrate allowing high gain for the amplifier. Broadband modeling of substrate‐shielded CPW in conjunction with the RF transistor model up to 40 GHz resulted in accurate gain matching of the amplifier. The power amplifier achieved a 12 dB small‐signal gain at 26.5 GHz, which is the highest for Ka‐band CMOS power amplifiers using common‐source transistors. The measured output power was 12.5 dBm with a power‐added‐efficiency of 8% at 26.5 GHz. These results show that scaled‐down CMOS technology is a viable option for low‐cost microwave and millimeter‐wave circuits. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2815–2817, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23827