Influence of metal‐semiconductor contact on the transmission characteristics of image dielectric waveguide | Zendy

Dudorov S. N. | Zendy; Lioubtchenko D. V. | Zendy; Räisänen A. V. | Zendy

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Influence of metal‐semiconductor contact on the transmission characteristics of image dielectric waveguide

Author(s) -

Dudorov S. N.,

Lioubtchenko D. V.,

Räisänen A. V.

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23820

Subject(s) - microwave , materials science , waveguide , semiconductor , schottky barrier , dielectric , schottky diode , metal , optoelectronics , transmission (telecommunications) , silicon , phase (matter) , optics , electrical engineering , physics , telecommunications , engineering , metallurgy , diode , quantum mechanics

Influence of a “Schottky‐like” barrier on a Silicon rod waveguide to its propagation characteristics were studied in W‐band. A considerable positive phase shift was observed, with a maximum at about 99 GHz (about 10 radians at 30‐mm long waveguide). Maximal insertion loss was also observed at the same frequency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2925–2928, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23820

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