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Influence of metal‐semiconductor contact on the transmission characteristics of image dielectric waveguide
Author(s) -
Dudorov S. N.,
Lioubtchenko D. V.,
Räisänen A. V.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23820
Subject(s) - microwave , materials science , waveguide , semiconductor , schottky barrier , dielectric , schottky diode , metal , optoelectronics , transmission (telecommunications) , silicon , phase (matter) , optics , electrical engineering , physics , telecommunications , engineering , metallurgy , diode , quantum mechanics
Influence of a “Schottky‐like” barrier on a Silicon rod waveguide to its propagation characteristics were studied in W‐band. A considerable positive phase shift was observed, with a maximum at about 99 GHz (about 10 radians at 30‐mm long waveguide). Maximal insertion loss was also observed at the same frequency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2925–2928, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23820