The fully‐integrated CMOS RF power amplifier using the semilumped transformer | Zendy

Jin Boshi | Zendy; Han Kichon | Zendy; Choi Jinsung | Zendy; Kang Daehyun | Zendy; Kim Bumman | Zendy

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The fully‐integrated CMOS RF power amplifier using the semilumped transformer

Author(s) -

Jin Boshi,

Han Kichon,

Choi Jinsung,

Kang Daehyun,

Kim Bumman

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23811

Subject(s) - amplifier , rf power amplifier , electrical engineering , cmos , transformer , engineering , electronic engineering , power added efficiency , direct coupled amplifier , linearity , wimax , power bandwidth , microwave , operational amplifier , wireless , telecommunications , voltage

A semilumped output transformer for fully‐integrated RF CMOS power amplifier is proposed in this paper. To demonstrate this transformer, a 2.5‐GHz CMOS power amplifier is implemented with a 0.18‐μm RF CMOS process used for WiMAX application. The power amplifier can achieve 39% PAE (power added efficiency) at P1dB (1 dB compression point) and output power of 30 dBm. The linearity can satisfy the spectrum mask of the WiMAX signal requirement basically. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2857–2860, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23811

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