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A 1‐GHz GaN HEMT based class‐E power amplifier with 80% efficiency
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23803
Subject(s) - high electron mobility transistor , amplifier , electrical engineering , capacitor , inductor , transistor , engineering , power added efficiency , monolithic microwave integrated circuit , electronic engineering , microwave , gallium nitride , rf power amplifier , optoelectronics , materials science , voltage , telecommunications , cmos , layer (electronics) , composite material
This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. The peak PAE and drain efficiency of 79.2 and 80.4% with a power gain of 18.14 dB is achieved at an output power of 41.14 dBm for a continuous wave. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2989–2992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23803