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A low power low noise amplifier with subthreshold operation in 130 nm CMOS technology
Author(s) -
Song Ickhyun,
Jhon HeeSauk,
Jung Hakchul,
Koo Minsuk,
Shin Hyungcheol
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23788
Subject(s) - cmos , subthreshold conduction , electrical engineering , noise figure , low noise amplifier , figure of merit , amplifier , electronic engineering , engineering , noise (video) , optoelectronics , transistor , materials science , computer science , voltage , image (mathematics) , artificial intelligence
In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and measured signal gain, noise figure, and power consumption are 13.4 dB, 5.2 dB, and 980 μW, respectively, at target frequency. Also the LNA achieves the highest figure of merit among the recently published subthreshold LNAs. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2762–2764, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23788