11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO‐FF technique | Zendy

Wei HungJu | Zendy; Meng Chinchun | Zendy; Chang YuWen | Zendy; Huang GuoWei | Zendy

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11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO‐FF technique

Author(s) -

Wei HungJu,

Meng Chinchun,

Chang YuWen,

Huang GuoWei

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23740

Subject(s) - heterojunction bipolar transistor , frequency divider , optoelectronics , materials science , electrical engineering , microwave , voltage , bipolar junction transistor , biasing , transistor , engineering , cmos , telecommunications

An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO‐FF (high‐speed latching operating flip‐flop) structure is demonstrated at 4.1–11.8 GHz. In this experiment, a conventional static frequency divider using the same cut‐off‐frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f T and optimizing the I read /I latch ratio, the maximum operating frequency of the HLO‐FF is greatly improved due to higher slew‐rate and smaller voltage swing. The speed of HLO‐FF is faster about 48% than that of static structure. The core current is 13 mA at the supply voltage of 5 V. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2642–2645, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23740

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