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11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO‐FF technique
Author(s) -
Wei HungJu,
Meng Chinchun,
Chang YuWen,
Huang GuoWei
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23740
Subject(s) - heterojunction bipolar transistor , frequency divider , optoelectronics , materials science , electrical engineering , microwave , voltage , bipolar junction transistor , biasing , transistor , engineering , cmos , telecommunications
Abstract An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO‐FF (high‐speed latching operating flip‐flop) structure is demonstrated at 4.1–11.8 GHz. In this experiment, a conventional static frequency divider using the same cut‐off‐frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f T and optimizing the I read /I latch ratio, the maximum operating frequency of the HLO‐FF is greatly improved due to higher slew‐rate and smaller voltage swing. The speed of HLO‐FF is faster about 48% than that of static structure. The core current is 13 mA at the supply voltage of 5 V. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2642–2645, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23740