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Higher‐efficiency‐biasing technique for enhancing the performance of BJT‐distributed amplifiers
Author(s) -
Leung Tik Shun,
Chan Wing Shing
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23714
Subject(s) - biasing , bipolar junction transistor , amplifier , microwave , electronic engineering , electrical engineering , transmission line , power (physics) , distributed amplifier , engineering , transistor , voltage , materials science , rf power amplifier , telecommunications , cmos , physics , quantum mechanics
Abstract Efficiency of distributed amplifier based on bipolar junction transistors is low particularly at higher frequencies. The work presented here shows an increase in efficiency of up to three times by applying a proposed unequal biasing technique, which also eliminates the inefficient use of a dummy load at the output artificial transmission line. The proposed circuit provides a maximum power added efficiency of 27.8% which is a three‐times improvement compared with the optimized conventional distributed amplifier. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2725–2727, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23714