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A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers
Author(s) -
Huang JianMing,
Wang ChuaChin,
Chiu YiJen
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23693
Subject(s) - transimpedance amplifier , cmos , photodetector , bandwidth (computing) , electrical engineering , engineering , electronic engineering , microwave , capacitance , amplifier , integrated circuit , optoelectronics , physics , operational amplifier , telecommunications , electrode , quantum mechanics
An opto‐electronic integrated circuit based on the hybrid scheme for an optical receiver front‐end is presented in this article. The proposed integrated circuit adopts the CMOS technology as the vehicle to integrate the InP‐based waveguide photodetector into the transimpedance amplifier (TIA) circuit. A regulated cascade structure is used to reduce the input impedance of the TIA. Hence, the proposed integrated circuit can achieve a very high bandwidth provided that the parasitic capacitance of the photodetector is up to 1 pF. The 3‐dB bandwidth and the transimpedance gain of the proposed circuit are 1 GHz and 64.5 dBΩ, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2430–2434, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23693