On‐chip dipoles in CMOS for wireless interconnect application

Two new on‐chip dipoles in standard 0.18‐μm CMOS are presented. The dipoles show higher inter‐chip transmission gain than traditional on‐chip meander dipole and smaller coverage than traditional on‐chip linear dipole. Comparison between the simulated and measured S11 of the on‐chip dipoles indicates that the existence of metal, poly and diffusion dummies decrease the resonances. Transmission gains with different inter‐chip distances and under different experiment conditions are calculated from measured S parameters, respectively. The design is helpful for the performance improvement of on‐chip dipoles and the farther CMOS integration of on‐chip antennas for wireless interconnect applications. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2446–2449, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23686