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A differential HBT power cell and its model
Author(s) -
Lee Dong Ho,
Chen Yue,
Lee KyungAi,
Hong Songcheol
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23684
Subject(s) - heterojunction bipolar transistor , amplifier , resistor , electrical engineering , common emitter , differential amplifier , transistor , power (physics) , electronic engineering , bipolar junction transistor , engineering , optoelectronics , materials science , physics , cmos , voltage , quantum mechanics
A differential heterojunction bipolar transistor (HBT) power cell has been designed and modeled with additional model extraction patterns. The differential power cell, which is composed of a unit differential amplifier with a common emitter ballast resistor, has no gain degradation by the ballast resistors and has been implemented in InGaP/GaAs HBT technology. DC and AC characteristics are extracted from a half circuit of the differential power cell and thermal characteristics are extracted from a common‐mode circuit of that. Using the extracted model, a 5‐GHz differential power amplifier has been designed and fabricated with on‐chip output networks. The 5‐GHz differential power amplifier delivers 26 dBm of P 1dB with 30% collector efficiency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2262–2268, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23684