A differential HBT power cell and its model | Zendy

Lee Dong Ho | Zendy; Chen Yue | Zendy; Lee KyungAi | Zendy; Hong Songcheol | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

A differential HBT power cell and its model

Author(s) -

Lee Dong Ho,

Chen Yue,

Lee KyungAi,

Hong Songcheol

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23684

Subject(s) - heterojunction bipolar transistor , amplifier , resistor , electrical engineering , common emitter , differential amplifier , transistor , power (physics) , electronic engineering , bipolar junction transistor , engineering , optoelectronics , materials science , physics , cmos , voltage , quantum mechanics

A differential heterojunction bipolar transistor (HBT) power cell has been designed and modeled with additional model extraction patterns. The differential power cell, which is composed of a unit differential amplifier with a common emitter ballast resistor, has no gain degradation by the ballast resistors and has been implemented in InGaP/GaAs HBT technology. DC and AC characteristics are extracted from a half circuit of the differential power cell and thermal characteristics are extracted from a common‐mode circuit of that. Using the extracted model, a 5‐GHz differential power amplifier has been designed and fabricated with on‐chip output networks. The 5‐GHz differential power amplifier delivers 26 dBm of P 1dB with 30% collector efficiency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2262–2268, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23684

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research