A high‐efficiency inverse class‐F power amplifier using GaN HEMT | Zendy

Kim Hyoungjong | Zendy; Choi Gilwong | Zendy; Choi Jinjoo | Zendy

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A high‐efficiency inverse class‐F power amplifier using GaN HEMT

Author(s) -

Kim Hyoungjong,

Choi Gilwong,

Choi Jinjoo

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23678

Subject(s) - high electron mobility transistor , amplifier , power added efficiency , gallium nitride , microwave , transistor , electrical engineering , optoelectronics , inverse , power (physics) , materials science , rf power amplifier , electronic engineering , engineering , physics , telecommunications , mathematics , cmos , voltage , nanotechnology , geometry , layer (electronics) , quantum mechanics

The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement results show that power‐added efficiency of 74.2%, drain efficiency of 77.5%, and gain of 13.7 dB at an output power of 39.8 dBm for a continuous wave signal. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2420–2422, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23678

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