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A 0.18‐μm 3.1–4.8 GHz CMOS wideband LNA for UWB system
Author(s) -
Jeong Moo I.,
Lee Jung N.,
Lee Chang S.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23664
Subject(s) - wideband , cmos , noise figure , electrical engineering , low noise amplifier , microwave , amplifier , return loss , electronic engineering , physics , engineering , optoelectronics , materials science , telecommunications , antenna (radio)
We have proposed a 3.1–4.8 GHz CMOS wideband low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18‐μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband LNA exhibits a noise figure of 3.3–3.7 dB, a gain of 12.8–13.9 dB, and an input/output return loss higher then 9.4/7.3 dB. The input IP3 (IIP3) at 4.1 GHz is +1.25 dBm, and consumes 16.5 mW of power. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2368–2371, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23664