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Single‐layer bandpass active frequency selective surface
Author(s) -
Kiani Ghaffer I.,
Ford Kenneth L.,
Esselle Karu P.,
Weily Andrew R.,
Panagamuwa C.,
Batchelor John C.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23615
Subject(s) - band pass filter , microwave , diode , materials science , aperture (computer memory) , tunable metamaterials , biasing , optics , active layer , pin diode , angle of incidence (optics) , transmission (telecommunications) , optoelectronics , selective surface , layer (electronics) , electrical engineering , voltage , engineering , physics , acoustics , telecommunications , metamaterial , composite material , thin film transistor
A single‐layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating frequency of 2.45 GHz. It is based on circular loop aperture with each unit cell having four PIN diodes. A novel method for dc biasing is used. About 12 dB average variation in transmission loss, between ON and OFF states, has been experimentally achieved at 2.45 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2149–2151, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23615

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