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Controllable terahertz wave attenuator
Author(s) -
Li Jiusheng,
Yao Jianquan
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23528
Subject(s) - terahertz radiation , attenuator (electronics) , wafer , materials science , optoelectronics , microwave , silicon , optics , optical attenuator , attenuation , telecommunications , physics , engineering , fiber optic sensor , composite material , fiber
A new type of optically controllable terahertz wave attenuator using high‐resistivity silicon wafer is developed and tested. Without optical excitation, the high‐resistivity silicon is a lossless dielectric material at terahertz wave region. When the high‐resistivity silicon wafer is optically excited, free carriers are generated, and the silicon wafer becomes a lossy dielectric. We study theoretically and demonstrate experimentally light‐controllable terahertz wave of the high‐resistivity silicon wafer. The results show that more than 10‐dB attenuation of the novel terahertz wave attenuator is obtained at frequency of 0.3 THz. The proposed device can be used in future terahertz wave communication systems. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1810–1812, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23528