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A low‐power V‐band CMOS low‐noise amplifier using current‐sharing technique
Author(s) -
Yang HongYu,
Lin YoSheng,
Chen Chen Chi
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23523
Subject(s) - noise figure , electrical engineering , low noise amplifier , cmos , amplifier , capacitor , noise (video) , current source , engineering , power gain , voltage , electronic engineering , computer science , artificial intelligence , image (mathematics)
A low‐power‐consumption 53‐GHz (V‐band) low‐noise amplifier (LNA) using standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is composed of four cascaded common‐source stages. Current‐sharing technique is adopted in the third and four stages to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain at the design frequency. This LNA achieved voltage gain (A V ) of 14 dB, very low noise figure (NF) of 6.13 dB, input referred 1‐dB compression point (P 1dB‐in ) of −20 dBm, and input third‐order inter‐modulation point (IIP3) of −9 dBm at 53 GHz. It consumed only a very small dc power of 10.56 mW. In addition, the chip area was only 0.91 × 0.58 mm 2 , including all the test pads and bypass capacitors. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1876–1879, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23523