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Engineering the phase speed of surface‐plasmon wave at the planar interface of a metal and a chiral sculptured thin film
Author(s) -
Lakhtakia Akhlesh,
Polo John A.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23511
Subject(s) - thin film , planar , phase (matter) , materials science , microwave , plasmon , deposition (geology) , interface (matter) , metal , chemical vapor deposition , surface plasmon , optics , optoelectronics , nanotechnology , chemistry , engineering , computer science , physics , composite material , organic chemistry , telecommunications , metallurgy , paleontology , computer graphics (images) , sediment , biology , capillary number , capillary action
The solution of a boundary‐value problem formulated for a modified Kretschmann configuration shows that the phase speed of a surface‐plasmon wave guided by the planar interface of a sufficiently thin metal film and a chiral sculptured thin film (STF) depends on the vapor incidence angle used while fabricating the chiral STF by physical vapor deposition. Therefore, it may be possible to engineer the phase speed quite simply by selecting an appropriate value of the vapor deposition angle (in addition to the metal and the evaporant species). © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1966–1970, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23511