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A low‐voltage divide‐by‐3 injection‐locked frequency divider
Author(s) -
Lee ChienFeng,
Jang ShengLyang
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23499
Subject(s) - frequency divider , voltage controlled oscillator , electrical engineering , cmos , voltage , microwave , engineering , voltage divider , low voltage , materials science , optoelectronics , electronic engineering , telecommunications
This study proposes a new low‐voltage divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a CMOS dynamic threshold voltage LC‐tank voltage‐controlled‐oscillator (VCO) with two injection MOSFETs. The self‐oscillating VCO is injection‐locked by third‐harmonic input to obtain the division order of three. Measurement results show that at the supply voltage of 0.36 V, the free‐running frequency is from 1.015 to 1.093 GHz. At the incident power of −10 dBm, the locking range is from the incident frequency 3.01 to 3.33 GHz. This is the lowest voltage ILFD ever reported in literatures. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1905–1908, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23499