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Divide‐by‐3 injection‐locked frequency divider implemented with active inductor
Author(s) -
Jang ShengLyang,
Tai ChiaWei,
Lee ChienFeng
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23458
Subject(s) - frequency divider , voltage controlled oscillator , electrical engineering , inductor , cmos , microwave , voltage , engineering , current divider , transistor , electronic engineering , telecommunications
This article presents a wide locking‐range divide‐by‐3 injection‐locked frequency divider (ILFD) employing tunable active inductors (TAIs), which are used to extend the locking range and to reduce die area. The CMOS ILFD is based on a voltage‐controlled oscillator (VCO) with cross‐coupled switching pairs and TAI‐C tanks, and was fabricated in the 0.18‐μm 1P6M CMOS technology. The divide‐by‐3 function is performed by injecting differential signal to the gates of two injection MOSFETs with the drains connected to the VCO outputs and with grounded sources. Measurement results show that at the supply voltage of 1.8 V, the divider free‐running frequency is tunable from 1.20 to 1.284 GHz, and at the incident power of 4 dBm the locking range is about 1.9 GHz (45.2%), from the incident frequency 3.3 to 5.2 GHz. The core power consumption is 12.96 mW. The die area is 0.45 × 0.513 mm 2 . © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1682–1685, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23458