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A 23‐GHz capacitive‐degeneration LC VCO with a FOM of −199 dBc/Hz
Author(s) -
Lee J. Y.,
Lee S. H.,
Kim H.,
Yu H. K.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23453
Subject(s) - dbc , voltage controlled oscillator , phase noise , capacitive sensing , materials science , capacitance , electrical engineering , microwave , optoelectronics , capacitive coupling , offset (computer science) , engineering , physics , telecommunications , electrode , voltage , computer science , programming language , quantum mechanics
In this article, we presents a fully differential 23‐GHz capacitively emitter‐degeneration double cross‐coupled LC‐tank VCO. The proposed capacitive‐degeneration negative‐resistance cell has higher f trans and lower input capacitance than conventional cross‐coupled pairs at millimeter‐wave band. The proposed capacitive‐degeneration LC VCO shows low phase noise of −105 dBc/Hz at 100 kHz offset from 23 GHz carrier and wide tuning range of 20.8–24.2 GHz, and consumes 10 mA current. The proposed 23 GHz LC VCO shows a good FOM of −199 dBc/Hz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1688–1690, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23453
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