High‐speed divide‐by‐4/5 prescalers with merged and gates using GaInP/GaAs HBT and SiGe HBT technologies | Zendy

Wei HungJu | Zendy; Meng Chinchun | Zendy; Chang YuWen | Zendy; Lin YiChen | Zendy; Huang GuoWei | Zendy

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High‐speed divide‐by‐4/5 prescalers with merged and gates using GaInP/GaAs HBT and SiGe HBT technologies

Author(s) -

Wei HungJu,

Meng Chinchun,

Chang YuWen,

Lin YiChen,

Huang GuoWei

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23407

Subject(s) - heterojunction bipolar transistor , frequency divider , optoelectronics , electrical engineering , materials science , heterojunction , voltage , microwave , transistor , engineering , bipolar junction transistor , telecommunications , cmos

This paper demonstrates the divide‐by‐4/5 prescalers with merged AND gates in 2‐μm GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35‐μm SiGe HBT technologies. By biasing the HBT near the peak transit‐time frequency (f T ), the maximum operating frequency of a D‐type flip‐flop can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher‐speed performance of 1–8 GHz at the cost of power consumption. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1498–1500, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23407

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