Premium
High‐speed divide‐by‐4/5 prescalers with merged and gates using GaInP/GaAs HBT and SiGe HBT technologies
Author(s) -
Wei HungJu,
Meng Chinchun,
Chang YuWen,
Lin YiChen,
Huang GuoWei
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23407
Subject(s) - heterojunction bipolar transistor , frequency divider , optoelectronics , electrical engineering , materials science , heterojunction , voltage , microwave , transistor , engineering , bipolar junction transistor , telecommunications , cmos
This paper demonstrates the divide‐by‐4/5 prescalers with merged AND gates in 2‐μm GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35‐μm SiGe HBT technologies. By biasing the HBT near the peak transit‐time frequency (f T ), the maximum operating frequency of a D‐type flip‐flop can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher‐speed performance of 1–8 GHz at the cost of power consumption. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1498–1500, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23407