An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets | Zendy

Xu Yuehang | Zendy; Guo Yunchuan | Zendy; Xu Ruimin | Zendy; Yan Bo | Zendy; Wu Yunqiu | Zendy

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An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

Author(s) -

Xu Yuehang,

Guo Yunchuan,

Xu Ruimin,

Yan Bo,

Wu Yunqiu

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23397

Subject(s) - equivalent circuit , microwave , signal (programming language) , electronic engineering , power (physics) , electrical engineering , engineering , materials science , physics , computer science , telecommunications , voltage , quantum mechanics , programming language

The frequency‐dependence of parasitic resistances (R s and R d ) for 4H‐SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small‐signal equivalent circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S‐parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1455–1458, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23397

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