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A K‐band low‐noise amplifier using shunt RC‐feedback and series inductive‐peaking techniques
Author(s) -
Chen ChiChen,
Lin YoSheng,
Chang JinFa,
Lee JenHow
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23332
Subject(s) - noise figure , return loss , electrical engineering , low noise amplifier , amplifier , output impedance , cmos , impedance matching , electrical impedance , engineering , power gain , inductor , wideband , input impedance , electronic engineering , materials science , physics , voltage , antenna (radio)
A 28.2 GHz (K‐band) low‐noise amplifier (LNA) using standard 0.18‐μm CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascaded common‐source stages, and a peaking inductor (L g3 ) was added in the input terminal of the third stage to boost the peak gain (S 21 ) of 34.9% (simulation). Shunt RC feedback was adopted in the second and the third stage, respectively, for achieving good input and output impedance matching. At 28.2 GHz, this LNA achieved input return loss (S 11 ) of −13.4 dB, output return loss (S 22 ) of −20.5 dB, forward gain (S 21 ) of 12.9 dB, reverse isolation (S 12 ) of −50.2 dB, noise figure of 6.07 dB and input‐referred 1‐dB compression point (P 1dB‐in ) of −10.8 dBm. The minimum noise figure was 5.75 dB at 28.8 GHz. The chip area was only 950 μm × 590 μm excluding the test pads. The power consumption was 30.56 mW from a 1.8‐V power supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1148–1152, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23332