Dual band power amplifier in GaN technology | Zendy

Colantonio Paolo | Zendy; Giannini Franco | Zendy; Giofrè Rocco | Zendy; Piazzon Luca | Zendy

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Dual band power amplifier in GaN technology

Author(s) -

Colantonio Paolo,

Giannini Franco,

Giofrè Rocco,

Piazzon Luca

Publication year - 2008

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.23308

Subject(s) - amplifier , high electron mobility transistor , dbm , microwave , materials science , electrical engineering , power (physics) , optoelectronics , rf power amplifier , harmonic , engineering , physics , telecommunications , transistor , voltage , cmos , quantum mechanics

Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output power in the first (at 2.45 GHz) and second (at 3.3 GHz) bands, respectively. Moreover, a zero transmission condition has been obtained, resulting in a measured value of S 21 lower than −15 dB at 2.8 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1040–1042, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23308

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