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Divide‐by‐3 LC injection‐locked frequency divider with inductor over MOS topology
Author(s) -
Jang ShengLyang,
Chen WeiChi,
Lee ChienFeng
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23279
Subject(s) - frequency divider , nmos logic , inductor , electrical engineering , cmos , voltage divider , engineering , resonator , current divider , microwave , voltage , topology (electrical circuits) , electronic engineering , optoelectronics , materials science , transistor , telecommunications
This letter proposes a divide‐by‐3 frequency divider employing inductor‐over MOS topology to reduce the chip area and chip cost; the divider was fabricated using the 0.35‐μm 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled NMOSFETs, and the LC resonator is composed of two inductors and varactors. At the supply voltage of 1.6 V, the divider free‐running frequency is tunable from 2.17 to 2.43 GHz, and at the incident power of 0 dBm the locking range is about 1.03 GHz (14.9%), from the incident frequency 6.41 to 7.44 GHz. The core power consumption is 15.1 mW. The die area is 0.753 × 0.786 mm 2 . © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 988–992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23279