Premium
An experimental load matching technique for RF CMOS power amplifier
Author(s) -
Eo YunSeong,
Lee SeungJoon,
Baek DongHyun
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23248
Subject(s) - cmos , amplifier , realization (probability) , electrical engineering , matching (statistics) , electronic engineering , engineering , dbm , power (physics) , rf power amplifier , microwave , physics , telecommunications , mathematics , statistics , quantum mechanics
A load matching method for CMOS PA (power amplifier) design is proposed. The contours for RF power and efficiency can be drawn while considering external L and C as tunable X and Y variables. On the basis of the existence of this contour, the realization of load matching of CMOS PA is easily achieved and optimized. A tested CMOS PA based on 0.18 μm CMOS technology shows a design example whose P1dB is 17.8 dBm and power efficiency 37%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 899–902, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23248
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom