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Linearity‐optimized GaN HEMT Doherty amplifiers using derivative superposition technique for WCDMA applications
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23181
Subject(s) - high electron mobility transistor , amplifier , linearity , w cdma , adjacent channel , gallium nitride , microwave , dbc , electrical engineering , code division multiple access , optoelectronics , monolithic microwave integrated circuit , electronic engineering , adjacent channel power ratio , materials science , transistor , engineering , predistortion , telecommunications , phase noise , nanotechnology , cmos , layer (electronics) , voltage
Gallium nitride (GaN) high‐electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide‐band code division multiple access (WCDMA) applications are represented. At a 7‐dB back‐off output power, the measured single‐carrier WCDMA results show two‐way and three‐way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of −43.2 and −48.2 dBc at ±2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 701–705, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23181
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