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Characterization and modeling of on‐wafer single and multiple vias for CMOS RFICS
Author(s) -
Shi Xiaomeng,
Seng Yeo Kiat,
Anh Do Manh,
Chye Boon Chirn
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23173
Subject(s) - cmos , wafer , microwave , rfic , electronic engineering , equivalent circuit , inductance , electrical engineering , engineering , radio frequency , characterization (materials science) , materials science , optoelectronics , telecommunications , voltage , nanotechnology
Characterization of on‐wafer vias using a 0.18‐μm RF CMOS technology is presented. Equivalent resistance and inductance of a single via and multiple vias with different physical arrangements are extracted from full wave simulations up to 30 GHz. An equivalent circuit model with frequency‐independent components is proposed to model the frequency‐dependent characteristics of the vias. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 713–715, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23173