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Experimental analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers for WCDMA applications
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23134
Subject(s) - ldmos , high electron mobility transistor , predistortion , w cdma , amplifier , electrical engineering , microwave , electronic engineering , materials science , power (physics) , optoelectronics , engineering , transistor , code division multiple access , telecommunications , physics , cmos , voltage , quantum mechanics
Comparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one‐tone and 4‐carrier WCDMA signals at 2.14 GHz. The measured results show that the GaN HEMT PA shows better predistortability and more stable temperature and frequency characteristics compared with the Si LDMOS PA. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 393–396, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23134