Premium
Comparison of GAINP/GAAS HBT RFDS with resistive loads and shunt‐shunt feedback active loads
Author(s) -
Wei HungJu,
Meng Chinchun,
Chang YuWen,
Huang GuoWei
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23096
Subject(s) - heterojunction bipolar transistor , resistive touchscreen , electrical engineering , active load , chip , microwave , optoelectronics , shunt (medical) , voltage , materials science , bipolar junction transistor , heterojunction , cmos , transistor , engineering , telecommunications , medicine , cardiology
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f max /f min ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V. The chip size is 1.0 × 1.0 mm 2 . © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 433–435, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23096