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A small die area and wide locking range CMOS frequency divider
Author(s) -
Jang ShengLyang,
Han JuiCheng,
Lee ChienFeng,
Huang J.F.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23090
Subject(s) - frequency divider , cmos , electrical engineering , die (integrated circuit) , inductor , voltage , microwave , engineering , materials science , optoelectronics , telecommunications , mechanical engineering
This letter proposes a new injection‐locked frequency divider (ILFD) with wide locking range and small die area. The proposed CMOS ILFD consists of an injection MOS and an LC tank voltage‐controlled oscillator with a cross‐coupled switching pair and tunable active inductors. The divide‐by‐2 ILFD was fabricated in the 0.18‐μm 1P6M CMOS technology. At the supply voltage of 1.8 V, the divider free‐running frequency is tunable from 1.46 to 2.7 GHz, and at the incident power of −4 dBm the locking range is about 3.4 GHz (79%), from the incident frequency of 2.6 to 6.0 GHz. The core power consumption is 7.2 mW and the die area is 0.383 × 0.379 mm 2 . © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 541–544, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23090