Premium
A flat gain/power responses 618 GHz power amplifier MMIC with high PAE by using transformer networks
Author(s) -
Yu ShuJenn,
Hsu WeiChou,
Lee ChingSung,
Chang ChianSern,
Wu ChangLuen,
Chang ChingHsueh
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.23033
Subject(s) - amplifier , power added efficiency , power bandwidth , electrical engineering , monolithic microwave integrated circuit , rf power amplifier , linear amplifier , power gain , fully differential amplifier , dbm , engineering , direct coupled amplifier , materials science , electronic engineering , operational amplifier , cmos
A two‐stage power amplifier monolithic microwave integrated‐circuit, operating between 6 and 18 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors is presented. This devised power amplifier has demonstrated flat gain and power responses over a wide bandwidth by employing a novel design approach of combined prematched LC network and multisection impedance transformer network. Superior gain flatness of ±1.5 dB and power flatness of ±1.1 dBm over 6–18 GHz bandwidth, respectively, have been successfully achieved. With a dual‐bias configuration, the power amplifier shows average small‐signal gain of 13 dB, 2‐dB gain compression power of 32.4 dBm and high power‐added efficiency (PAE) of 24–34.5%. In additions, by using off‐chip combiner techniques, the balanced power amplifier shows superior maximum output power of 36.5 dBm and PAE of 22–33.1%. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 205–208, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23033