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Characterization of parasitics from scattering parameters of laser diode
Author(s) -
Zhang Shangjian,
Zhu Ninghua,
Liu Yong,
Liu Yongzhi
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22987
Subject(s) - parasitic extraction , laser diode , diode , laser , microwave , scattering , reflection (computer programming) , reflection coefficient , step recovery diode , scattering parameters , characterization (materials science) , optoelectronics , electronic engineering , materials science , engineering , electrical engineering , optics , physics , computer science , telecommunications , schottky diode , programming language
A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical‐domain measurement techniques. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1–4, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22987