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Modeling of dielectric charging in RF MEMS capacitive switches
Author(s) -
Sumant Prasad S.,
Cangellaris Andreas C.,
Aluru Narayana R.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22903
Subject(s) - microelectromechanical systems , capacitive sensing , dielectric , microwave , electronic engineering , materials science , electrical engineering , optoelectronics , engineering , telecommunications
A unified, macroscopic, one‐dimensional model is presented for the quantitative description of the process of dielectric charging in RF MEMS capacitive switches. The model provides for the direct incorporation of various physical factors known to impact dielectric charging, such as surface roughness, material inhomogeneity, and electric field‐dependent conduction in the dielectric. The values of the various parameters used in the model are extracted from experimental data. The proposed model serves as a generalization of various earlier models reported in the literature for the quantitative description of dielectric charging. Its formulation is such that it can be incorporated in a straightforward manner in coupled electro‐mechanical modeling schemes for the computer‐aided analysis of RF MEMS capacitive switches. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 3188–3192, 2007; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.22903