0.35‐μm SiGe BiCMOS variable‐gain power amplifier for WiMAX transmitters | Zendy

Liao HsienYuan | Zendy; Chen KuanYu | Zendy; Deng Joseph D.S. | Zendy; Chiou HwannKaeo | Zendy

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0.35‐μm SiGe BiCMOS variable‐gain power amplifier for WiMAX transmitters

Author(s) -

Liao HsienYuan,

Chen KuanYu,

Deng Joseph D.S.,

Chiou HwannKaeo

Publication year - 2007

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.22851

Subject(s) - variable gain amplifier , amplifier , electrical engineering , wimax , rf power amplifier , power added efficiency , bicmos , linear amplifier , automatic gain control , fully differential amplifier , linearity , electronic engineering , resistor , open loop gain , engineering , power bandwidth , voltage , operational amplifier , transistor , telecommunications , cmos , wireless

A 0.35‐μm SiGe BiCMOS variable‐gain power amplifier for WiMAX transmitters is presented. A voltage‐controlled variable resistor is used to control the gain of the linear amplifier. An open‐collector adaptive bias is utilized to obtain high linearity and efficiency. The measured power amplifier achieves a power gain of 22.2 dB, an output power of 20.6 dBm, and a power‐added efficiency of 24.4% with 10‐dB tuning range of linear gain. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2750–2753, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22851

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