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An accurate scaling approach for small‐signal modeling of high‐power HBT devices
Author(s) -
Bousnina Sami
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22765
Subject(s) - heterojunction bipolar transistor , small signal model , scaling , microwave , signal (programming language) , electronic engineering , transistor , bipolar junction transistor , power (physics) , heterojunction , wafer , electrical engineering , engineering , optoelectronics , materials science , computer science , physics , telecommunications , voltage , geometry , mathematics , quantum mechanics , programming language
This paper presents an accurate scaling approach for small‐signal modeling of high‐power multi‐cell heterojunction bipolar transistors (HBTs). This approach is mainly based on the characterization of an elementary‐cell device and a proper modeling of the metalwork structure surrounding the transistor intrinsic part. The determined elementary‐cell small‐signal model is then scaled up to generate the S‐parameters of the multi‐cell device. An experimental validation was performed on a single‐cell and three‐cells GaAsHBT devices and excellent agreement was obtained between measured and simulated S‐parameters over frequency range 1–15 GHz. This modeling approach is particularly useful for on‐wafer characterization and modeling of high power HBT devices. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2429–2434, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22765