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Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications
Author(s) -
Kabra Sneha,
Kaur Harsupreet,
Haldar Subhasis,
Gupta Mridula,
Gupta R. S.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22744
Subject(s) - mesfet , admittance , microwave , scattering parameters , admittance parameters , equivalent circuit , scattering , electronic engineering , physics , optoelectronics , computational physics , materials science , engineering , electrical engineering , electrical impedance , voltage , transistor , optics , telecommunications , field effect transistor
A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator and are also compared with parasitic element‐dependent model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2446–2450, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22744