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A robust parameter extraction method for HBT small‐signal equivalent circuit
Author(s) -
Ho SungJin,
Choi Min Ki,
van der Weide Daniel W.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22573
Subject(s) - heterojunction bipolar transistor , equivalent circuit , microwave , electronic engineering , monolithic microwave integrated circuit , engineering , electrical engineering , materials science , optoelectronics , transistor , telecommunications , bipolar junction transistor , voltage , amplifier , cmos
An improved pad‐deembedding technique for InGaP/GaAs HBT reducing uncertainty in measurement and equivalent circuit is proposed. Intrinsic elements are obtained by iteratively determining the external and internal base resistance. The extracted equivalent circuits demonstrate good agreement with the measured S‐parameters obtained from 45 MHz to 40 GHz for different sizes of HBTs. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1845–1848, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22573