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1.6 W K‐band MMIC power amplifier developed using low loss matching technique for point‐to‐point radio applications
Author(s) -
Bahl Inder J.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22486
Subject(s) - monolithic microwave integrated circuit , amplifier , mesfet , rf power amplifier , electrical engineering , power bandwidth , power added efficiency , engineering , microwave , electronic engineering , linear amplifier , bandwidth (computing) , transistor , telecommunications , cmos , field effect transistor , voltage
This paper presents the design approach and test results of a four‐stage 1.6‐W K‐band MMIC power amplifier developed for point‐to‐point radio applications. The design of the power amplifier was based on a small signal low loss matching technique. The MMIC was fabricated employing GaAs based high‐performance 0.4 μm multifunction self‐aligned gate MESFET technology. We achieved a minimum PAE of 22%, output power of 1.6 W (0.53 W/mm power density) and associate gain of 18 dB over the 17.5–20 GHz frequency range. Thus, we successfully applied a small signal technique in a four‐stage K‐band MMIC power amplifier to achieve bandwidth, power output and PAE performance objectives. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1521–1525, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22486