1.6 W K‐band MMIC power amplifier developed using low loss matching technique for point‐to‐point radio applications | Zendy

Bahl Inder J. | Zendy

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1.6 W K‐band MMIC power amplifier developed using low loss matching technique for point‐to‐point radio applications

Author(s) -

Bahl Inder J.

Publication year - 2007

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.22486

Subject(s) - monolithic microwave integrated circuit , amplifier , mesfet , rf power amplifier , electrical engineering , power bandwidth , power added efficiency , engineering , microwave , electronic engineering , linear amplifier , bandwidth (computing) , transistor , telecommunications , cmos , field effect transistor , voltage

This paper presents the design approach and test results of a four‐stage 1.6‐W K‐band MMIC power amplifier developed for point‐to‐point radio applications. The design of the power amplifier was based on a small signal low loss matching technique. The MMIC was fabricated employing GaAs based high‐performance 0.4 μm multifunction self‐aligned gate MESFET technology. We achieved a minimum PAE of 22%, output power of 1.6 W (0.53 W/mm power density) and associate gain of 18 dB over the 17.5–20 GHz frequency range. Thus, we successfully applied a small signal technique in a four‐stage K‐band MMIC power amplifier to achieve bandwidth, power output and PAE performance objectives. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1521–1525, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22486

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