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A high‐efficiency class‐E power amplifier using SiC MESFET
Author(s) -
Lee YongSub,
Jeong YoonHa
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22455
Subject(s) - mesfet , amplifier , dbc , power added efficiency , electrical engineering , power (physics) , rf power amplifier , harmonic , materials science , dbm , power gain , microwave , electronic engineering , engineering , transistor , physics , voltage , telecommunications , cmos , acoustics , field effect transistor , quantum mechanics
This article reports a high efficiency class‐E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for a single tone, the harmonic power levels are maintained below −58 dBc at a whole output power level. The peak power‐added efficiency of 72.3% with a power gain of 10.27 dB is achieved at an output power of 40.27 dBm. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1447–1449, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22455