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A 1‐V, 6‐mA, 3–6 GHz broadband 0.18‐μm CMOS low‐noise amplifier for UWB receiver
Author(s) -
Chang C.P.,
Yen C.C.,
Chuang H.R.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22428
Subject(s) - low noise amplifier , noise figure , return loss , electrical engineering , broadband , cmos , microwave , physics , amplifier , optoelectronics , engineering , electronic engineering , telecommunications , materials science , antenna (radio)
Abstract A 3–6 GHz broadband CMOS single‐ended LNA fabricated with the 0.18 μm 1P6M process for UWB and WLAN receiver is presented. Due to its noncascode circuit architecture, the proposed LNA can operate under 1V supply voltage and 6mA current consumption. In the UWB low band (3.1–5.15 GHz), the broadband LNA exhibit a gain of 11.7–13.7dB, noise figure less than 4.9 dB and input return loss better than 13.2 dB, respectively. From 5–6 GHz range (covering Hiperlan, 802.11a, and MBOA group B), the LNA exhibit a gain of 12.4–12.7 dB, noise figure less than 5.5 dB and input return loss better than 15.7 dB, respectively. The input P 1dB and IIP3 are −20 dBm and −10.9 dBm, respectively. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1358–1360, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22428