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High‐gain high‐isolation CMFB stacked‐LO subharmonic gilbert mixer using SiGe BiCMOS technology
Author(s) -
Wu T. H.,
Meng C. C.,
Huang G. W.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22398
Subject(s) - subharmonic , bicmos , optoelectronics , electrical engineering , frequency mixer , high gain antenna , heterojunction bipolar transistor , microwave , transistor , materials science , bipolar junction transistor , heterojunction , isolation (microbiology) , engineering , radio frequency , voltage , physics , telecommunications , nonlinear system , quantum mechanics , microbiology and biotechnology , biology
Abstract A 5.2‐GHz SiGe BiCMOS stacked‐LO‐stage CMFB (common mode feedback) subharmonic mixer is demonstrated in this article. The stacked‐LO‐stage and the active loads are used to improve the 2LO‐RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee‐voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and −78 dB 2LO‐RF isolation. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1214–1216, 2007; Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.22398