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Pearson‐IV type doping distribution‐based analytical modeling of dual‐material double‐gate fully‐depleted silicon‐on‐insulator MOSFET
Author(s) -
Kushwaha Alok,
Pandey Manoj K,
Gupta A. K
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22319
Subject(s) - mosfet , silicon on insulator , doping , metal gate , materials science , microwave , optoelectronics , double gate , silicon , electronic engineering , electrical engineering , engineering , transistor , gate oxide , telecommunications , voltage
A new two‐dimensional model for dual material double gate fully depleted SOI MOSFET is presented. An investigation of potential distribution in the silicon film is carried out with Pearson‐IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. The proposed structure is such that the work function of the gate metal (both sides) near the source is higher than the one near the drain. The analytical model so developed shows a step‐function in the potential along the channel, which screens the drain potential variation by the gate near the drain thereby suppressing the short channel effects (SCEs). The results predicted by the model are compared with those obtained by 2‐D device simulator ATLAS to verify the accuracy of the proposed model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 979–986, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22319