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Analyses and wideband modeling (DC‐to‐50 GHz) of dummy open devices on silicon for accurate RF devices and ICS de‐embedding applications
Author(s) -
Lin YoSheng,
Chen ChiChen,
Liang HsiaoBin,
Huang MengShiung
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22283
Subject(s) - electrical engineering , electrical impedance , wideband , microwave , guard (computer science) , engineering , embedding , electronic engineering , physics , computer science , telecommunications , artificial intelligence , programming language
In this work, a dummy open device with ground guard‐ring and another dummy open device without ground guard‐ring were measured and modeled from DC‐to‐50 GHz for precise de‐embedding of the parasitic part which surrounds the intrinsic part of the RF devices (i.e. MOSFET, SiGe HBT, etc.) and the RF‐ICs on silicon. The results show that both the input impedance and the output impedance of the dummy open device with ground guard ring can be simplified to a simple series RC circuit at low frequencies, and then a “shifted” parallel RC circuit at high frequencies. It is this intrinsic ambivalent characteristic of the input and the output impedance that causes the appearance of the kink phenomena of S 11 and S 22 in the Smith chart. Moreover, the reason why adding a ground guard‐ring underneath the signal pad makes the kink phenomena of S 11 and S 22 less prominent (or disappeared) can also be explained by our theory. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 879–882, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22283