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Noise modeling of heterojunction bipolar transistors using neural network approach
Author(s) -
Marković V.,
Prasad S.,
Stoǐć A.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22275
Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , microwave , electronic engineering , heterojunction , noise (video) , artificial neural network , engineering , electrical engineering , transistor , computer science , optoelectronics , materials science , telecommunications , voltage , artificial intelligence , image (mathematics)
The advantages of heterojunction bipolar transistors (HBTs) make them very promising for modern RF communication systems and therefore their noise performance becomes an important issue as well. A procedure for HBT noise modeling based on the neural network approach is presented in this paper. The proposed models are characterized by high accuracy and efficiency commonly requested for today's CAD techniques. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 852–854, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22275