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C‐band fully integrated SiGe HBT superharmonic QVCO
Author(s) -
Tseng S. C.,
Meng C. C.,
Chang Y. W.,
Huang G. W.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22256
Subject(s) - heterojunction bipolar transistor , dbc , phase noise , subharmonic function , electrical engineering , optoelectronics , figure of merit , microwave , voltage , materials science , transistor , bipolar junction transistor , engineering , telecommunications , mathematical analysis , mathematics
This paper demonstrates a 4‐GHz monolithic SiGe heterojunction bipolar transistor quadrature voltage‐controlled oscillator (QVCO) using superharmonic coupling topology. The QVCO at 4.17 GHz has phase noise of −116 dBc/Hz at 1 MHz offset frequency, output power of −6 dBm, and the figure of merit −179 dBc/Hz. The core current consumption is 3.2 mA at 3 V supply voltage. The die size is about 1.4 mm × 1.2 mm. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 867–869, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22256
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